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Eliminating backgrind defects with wet chemical etching
Published in Solid State Technology, November 1998
Cheryl McHatton, SEZ America Inc., Phoenix, Arizona and Cynthia M. Gumbert, ADE Corp., Westwood, Massachusetts
Backgrinding and wet etching are necessary processes at the end of many IC fabrication sequences. Properly tuning a wet-etch process helps to maximize relief of stress and damage in wafers and dies. With a tightly controlled wet-etch process, tests reveal that removing a minimal 8 µm of backside silicon after backgrinding can eliminate 80% of warp and stress. Total thickness variation of tested wafers remained very low after removing between 8 and 20 µm. The greatest wafer and die strength improvement occurred after removing 30 µm of damaged backside silicon. ....
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