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Addressing Cu contamination via spin-etch cleaning
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Published in Solid State Technology, November 1999
Patrick S. Lysaght, SEMATECH Inc., Austin, Texas
Michael West, SEZ America Inc., Phoenix, Arizona
While a wafer backside and back edge can be hermetically sealed and protected from copper contamination during electroplating, the front-side exclusion zone and beveled edge are still vulnerable because clamping during electroplating is not a totally effective mask. However, tests have revealed that a proprietary Spin-Process can remove this front-side contamination and any troublesome backside contamination to <=5x1010 atoms/cm2 ....
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