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New Dicing and Thinning Concept Improves Mechanical Reliability of Ultra Thin Silicon
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Int. Symp. and Exhibition on Advanced Packaging Materials, March 2001, Braselton, Georgia, USA
Authors: C. Landesberger, G. Klink, G. Schwinn, R. Aschenbrenner
(Fraunhofer-Institute for Reliability and Microintegration, Germany)
Abstract: Ultra-thin silicon ICs with a remaining thickness of less than 30µm are investigated with respect to their manufacturing technology and mechanical behavior. Thin wafers which were diced using a standard sawing process reveal low fracture resistance when a bending force is applied to single chips. To eliminate influence of micro-cracks induced by sawing extremely thin wafers, the new concept "Dicing by Thinning" was developed and is explained in the paper. The concept allows manufacturing of 10 - 30 µm thin wafers and includes self-acting die separation during thinning procedure. Best results are achieved when dicing lines between chips are prepared at front side of wafer by dry etching methods.
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