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Semiconductor Int'l - EDITORS PICK - All Wet-Stripping of FEOL Resist Using Mixtures of Sulphuric Acid

E. Bellandi and M. Alessandri, STMicroelectronics; S. Detterbeck, S.A. Henry, T. Hellweg, M. Kagerer, L. Brilz and L. Archer, SEZ AG — Semiconductor International, 4/1/2007

 
Continued use of plasma ashing and wet cleaning is now in jeopardy,
as tightening design rules and the introduction of new materials are
threatening to limit the use of plasma-strip processes because of
concerns about substrate damage.

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